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4inch Sapphire Wafer 200um Thickness C Axis Highly Applied for Semiconductor

4inch Sapphire Wafer 200um Thickness C Axis Highly Applied for Semiconductor

Nombre De La Marca: ZMSH
Número De Modelo: 4inch Sapphire Wafer
MOQ: 10 piezas
Detalles Del Embalaje: Paquete de vacío
Condiciones De Pago: T/T
Información detallada
Lugar de origen:
PORCELANA
Certificación:
RoHS
Diámetro:
4 pulgadas
Espesor:
200±15um
polaco:
dsp o ssp
Urdimbre:
≤ 10um
TTV:
≤ 10um
Aspereza:
Ra ≤ 0,2 nm
Rascar/Excavar.:
20/10
Forma:
Redondo, Plano, Muesca
Resaltar:

Semiconductor de obleas de zafiro de 4 pulgadas

,

Substrato de zafiro de 200 mm de espesor

,

Semiconductor de obleas de zafiro del eje C

Descripción de producto

4inch Sapphire Wafer 200um Thickness C Axis Highly Applied for Semiconductor

 

 

Product Description:

 

Sapphire wafers are composed of aluminum oxide (Al₂O₃), in which three oxygen atoms are covalently bonded to two aluminum atoms. They exhibit a hexagonal lattice crystal structure and are commonly cut along the A-plane, C-plane, and R-plane orientations. Owing to their broad optical transparency range, sapphire wafers transmit light from the near-ultraviolet (190 nm) to the mid-infrared wavelengths, making them an ideal choice for optical components, infrared devices, high-power laser windows, and photomask materials. Sapphire wafers are renowned for their high acoustic velocity, high-temperature resistance, corrosion resistance, high hardness, excellent transparency, and high melting point (2045°C). They are a challenging material to process, but are widely used in optoelectronic devices.

 

 

Product Parameters:

 

Diameter: 4inch or 100±0.1mm
Thickness: 200±15um500 ± 15 um,650±15um;
Roughness: Ra ≤ 0.2 nm
Warp: ≤ 10um
TTV: ≤ 10um
Polish: DSP (Double Side Polished); SSP(Single Side Polished)
Shape: Round, Flat, Notch
Wafer Orientation: C Axis
Edge Form: 45°, C shape
Material: Sapphire
Remarks: All specifications above can be customized upon your request.

 

 

Product Pictures:

 

4inch Sapphire Wafer 200um Thickness C Axis Highly Applied for Semiconductor 0

 

 

Product Highlights:

 

* Sapphire wafers are with common crystallographic orientations include C‑plane (0001), A‑plane (11‑20), and R‑plane (1‑102); the choice of orientation tailors optical, mechanical, and epitaxial behavior for specific devices.

 

* Typical optical transmission spans the near‑UV to mid‑infrared (approximately 0.19–5.5 μm), with high transparency in the 0.3–5 μm range, supporting applications in optics and optoelectronics.

 

* Mechanical and thermal properties of sapphire wafers include a Mohs hardness of 9, high strength and wear resistance, and a melting point ~2050°C, enabling performance under extreme environments.

 

* Chemical stability of sapphire wafers is excellent—resistant to most acids and alkalis—with notable attack only by HF, phosphoric acid, and molten KOH at elevated temperatures.

 

* Representative applications of sapphire wafers: LED substrates (GaN on sapphire), infrared and laser windows, optical components, and wear‑resistant covers in consumer electronics.

 

 

 

Related Product Recommendation:

 

150mm 6 Inch Sapphire Substrate Al2O3 DSP Ssp 1.0mmt For Led PSS Customized

4inch Sapphire Wafer 200um Thickness C Axis Highly Applied for Semiconductor 1

 

Q&A:

 

Q: What is a sapphire wafer?

 

A: A sapphire wafer is a circular thin slice made of sapphire material, which is widely used in the manufacturing of semiconductors and optical devices.

 

Q: What size are sapphire wafers?

 

A: 2inch, 3inch, 4inch, 6inch, 8inch, 12inch.

 

Q: How to cut a sapphire wafer?

 

A: Cutting a sapphire wafer requires specialized methods due to its extreme hardness (9 on the Mohs scale, second only to diamond) and brittleness. The core approach relies on abrasive-based or laser-based techniques to achieve precise, low-damage cuts.