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High Purity Green Silicon Carbide Powder for Precision Grinding and Polishing

High Purity Green Silicon Carbide Powder for Precision Grinding and Polishing

Nombre De La Marca: ZMSH
Número De Modelo: Polvo de silicio verde
MOQ: 10 kg
Detalles Del Embalaje: Personalizable
Condiciones De Pago: T/T
Información detallada
Lugar de origen:
Porcelana
Certificación:
Rohs
Pureza:
99.9995%
Material:
Polvo Sic verde de alta pureza
Tamaño de grano:
20-100um
Color:
té verde
Resistividad:
0.015 ∙ 0.028 ∙
Tipo:
4h-n
Resaltar:

high purity silicon carbide powder

,

green silicon carbide for grinding

,

silicon carbide polishing powder

Descripción de producto

High Purity Green Silicon Carbide Powder for Precision Grinding and Polishing

 

Product Description:

Green silicon carbide powder is a type of silcon carbide product that has high thermal conductivity and high strength at elevated temperatures. It is produced by heating silica sand and a carbon source, typically petroleum coke, to high temperatures in a large, open “Acheson” furnace. The result of this high-temperature process is the crystalline form of silicon carbide grains, of both Green and Black coloring. The color difference is due to the purity of the silicon carbide. Green SiC is of higher purity than black silicon carbide. Green silicon carbide is produced in the same way as black silicon carbide, but with different requirements for raw materials. Green silicon carbide is made of petroleum coke and high-quality silica as the main raw material. It is added with salt as an additive and is smelted by high-temperature resistance furnace. The mark of green silicon carbide is usually GC, the crystallization is α-SiC, with hexagonal or rhombohedral crystal type, containing SiC around 99%.

                                                       High Purity Green Silicon Carbide Powder for Precision Grinding and Polishing 0

 

Green Silicon Carbide vs. Black Silicon Carbide
Property Green Silicon Carbide Black Silicon Carbide
Purity 99% SiC or higher 95-97% SiC
Hardness Mohs 9.5 Mohs 9.2
Color Bright green Black
Applications High-precision grinding, polishing, fine finishing, ceramics General-purpose grinding, sandblasting, wear-resistant surfaces
Durability Higher purity, offers more precision and minimal wear Suitable for heavy-duty applications but slightly lower precision

 

Green Silicon Carbide Abrasives Applications:

Grinding and Polishing: Ideal for fine grinding and polishing of materials like ceramics, glass, and gemstones.
Refractory Materials: Used in the production of high-temperature-resistant products like bricks, tiles, and kiln linings.
Abrasive Tools: Often used in the production of cutting discs, grinding wheels, and sandpaper.
Semiconductor Manufacturing: Due to its excellent electrical conductivity and hardness, it is used in semiconductor applications.
Blasting Media: Utilized in sandblasting for cleaning and surface finishing due to its sharp cutting edges.

Green Silicon Carbide Abrasives Technical Specifications

Property

Green Silicon Carbide

Chemical Composition

SiC: 99% min

Hardness

Mohs 9.5

Bulk Density

1.2–1.6 g/cm³

Melting Point

2700°C

Crystal Structure

Hexagonal

  

Q&A:

Q: What is green silicon carbide used for?

A: Green Silicon Carbide is mainly used for precision grinding, cutting, polishing, ceramic manufacturing, refractory materials, semiconductor wafer processing, and abrasive tools.
Its high purity and sharp cutting ability make it suitable for high-end and precision applications.

 

Q: How is Green Silicon Carbide different from other abrasives like Aluminum Oxide? 

A: Green Silicon Carbide is harder and sharper than aluminum oxide, making it ideal for fine grinding and precision work. It also has a higher thermal conductivity, which makes it well-suited for high-temperature environments.

 

Q:What is the difference between 3C SiC and 4H SiC?

A: 3C-SiC is suitable for high-frequency and high-power devices due to its high saturated electron drift speed. 4H-SiC has become an ideal choice for power electronic devices due to its high electron mobility, low on-resistance and high current density.