Name: Densamente 350 um substrato del semiconductor del INP del solo cristal de 2 pulgadas primero
Uploaded: 2026-03-10CDT21:17:53-05:00
Duration: 5 s
Description: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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Densamente 350 um substrato del semiconductor del INP del solo cristal de 2 pulgadas primero

Otros vídeos

February 20, 2023

Palabra Clave: Substrato del semiconductor

Chatea Contáctenos

Etiquetas:

#oblea de semiconductor #substrato de la oblea #substrato del gasb

Descripción del vídeo:

Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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