Name: Waferas epitaxiales 4H-SiC para MOSFET de ultraalta tensión (100 ‰ 500 μm, 6 pulgadas)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

Chatea Contáctenos

Waferas epitaxiales 4H-SiC para MOSFET de ultraalta tensión (100 ‰ 500 μm, 6 pulgadas)

Otros vídeos

September 02, 2025

Palabra Clave: Oblea del carburo de silicio

Chatea Contáctenos

Etiquetas:

#substrato del carburo de silicio #sic oblea #silicio en las obleas del zafiro

Descripción del vídeo:

Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

Vídeos relacionados